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l6114 L6115 april 1993 quad 100 v, dmos switch . output voltage to 100 v . 0.7 w r ds(on) . supply voltage up to 60 v . low input current . ttl/cmos compatible inputs . high switching frequency (200 khz) description realized with the multipower-bcd mixed bipo- lar/cmos/dmos process, the l6114/15 monolithic quad dmos switch is designed for high current, high voltage switching applications. each of the four switches is controlled by a logic input and all four are controlled by a common enable input. all inputs are ttl/cmos compatible for direct connection to logic circuits. each source is available for the insertion of the sense resistors in current control applications. two versions are available : the l6114 mounted in a powerdip 14+3+3 package and the L6115 in a 15- lead multiwatt package. ordering numbers : l6114 (powerdip) L6115 (multiwatt-15) multiwatt-15 pin connections (top view) powerdip 14 + 3 + 3 L6115 (multiwatt-15) l6114 (powerdip) multipower bcd technology 1/11
absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v cc supply voltage 60 v i d continuous drain current @<0>t pins = 90 c @<0>t case = 90 c powerdip multiwatt C15 1.5 3 a a i dm (*) pulsed drain current powerdip multiwatt C15 5 8 a a i sd continuous source-drain diode current @<0>t pins = 90 c @<0>t case = 90 c powerdip multiwatt C15 1.5 3 a a i sdm pulsed source drain diode current powerdip multiwatt C15 5 8 a a v in input voltage 7v v en enable voltage 7v v s source voltage C 1 to + 4 v p tot total power dissipation @ t pins = 90 c @ t case = 90 c @ t amb = 70 c @ t amb = 70 c powerdip multiwatt C15 powerdip multiwatt C15 4.3 20 1.3 2.3 w w w w t stg , t j storage and junction temperature range C 40 to + 150 c (*) pulse width 300 m s, duty cycle 10 %. note : i d , i dm , i sd , i sdm are given per channel. thermal data symbol parameter powerdip multiwattC15 unit r th j-pins thermal resistance junction-pins max. 14 - o c/w r th j-case thermal resistance junction-case max. - 3 o c/w r th j-amb thermal resistance junction-ambient max. 65 35 o c/w block diagram l6114 - L6115 2/11
electrical characteristics (t j = 25 o c, v cc = 40v, unless otherwise specified) symbol parameter test conditions min. typ. max. unit v cc supply voltage 14 48 v i cc supply current all v in = h v en = square wave (200khz, 50 % dc) 9ma i q quiescent current v en = l 2 3 ma bv dss drain source breakdown voltage i d = 1ma, v en = l 100 v i dss output leakage current v en = l v ds = 100v v ds = 80v, t j = 125 c1 1 ma r ds (on) (*) static drain-source on resistance v cc 3 14v, i d = 1.5a v en , v in = h 0.7 w v in l , v en l input low voltage C 0.3 0.8 v v in h , v en h input high voltage 2 7 v i in l , i en l input low current v in , v en = l C 100 m a i in h , i en h input high current v in , v en = h 10 m a t d (on) turn on delay time i d = 1.5a see test circuit and waveforms 300 ns t r rise time 100 ns t d (off) turn off delay time 400 ns t f fall time 100 ns v sd (*) source drain diode forward voltage i sd = 1.5a, v en = l 1.5 v v sd (on) (*) source drain forward voltage i sd = 1.5a - v in , v en = h 1.2 v (*) pulse test : pulse width = 300 m s, duty cycle = 2 %. l6114 - L6115 3/11
switching times resistive load figure 1 : test circuit (pins x = powerdip ; pins (x) = multiwatt). figure 2 : waveforms. b) a) l6114 - L6115 4/11
test circuit (pins x = powerdip ; pins (x) = multiwatt) figure 3 : quiescent current and output leakage current.. figure 4 : supply current. figure 5 : r ds (on) . figure 6 : source-drain diode forward voltage. v cc = 14 v, v in = 2 v, v en = 2v i d = square wave, f = 3 khz dc = 2 % (*) v ds is taken during the time in which the v ds i d = 1.5 a r ds = 1.5 v in = 2 v, i sd square wave, f = 3 khz dc = 2 % - set v en = 0.8 v for v sd (taken during the time in which i sd = 1.5 a) - set v en = 2 v for v sd (on) (taken during the time in which i sd = 1.5 a) v en = 0.8 v v in = 2 v v en = square wave { f = 200 khz dc = 50 % l6114 - L6115 5/11
figure 7 : input logic levels set v = 0.8 v s1,s2 open for i in l and i en l set v = 0.8 v s1,s2 close for v in l and v en h set v = 2 v s1,s2 open for i in h and i en h set v = 2 v s1,s2 close for v in h and v en h figure 8 : static drain-source on resistance. figure 9 : normalized break-down voltage vs. temperature. l6114 - L6115 6/11
figure 10 : normalized on resistance vs. temperature. figure 11 : typical source-drain diode forward voltage. (*) r th ? 9 c/w. figure 12 : r th j-amb vs. dissipated power(multiwatt). l6114 - L6115 7/11
figure 14 : peak transient thermal resistance vs.pulse width and duty cycle (multiwatt). figure 13 : transient thermal resistance for single pulses (multiwatt). l6114 - L6115 8/11
powerdip20 package mechanical data dim. mm inch min. typ. max. min. typ. max. a1 0.51 0.020 b 0.85 1.40 0.033 0.055 b 0.50 0.020 b1 0.38 0.50 0.015 0.020 d 24.80 0.976 e 8.80 0.346 e 2.54 0.100 e3 22.86 0.900 f 7.10 0.280 i 5.10 0.201 l 3.30 0.130 z 1.27 0.050 l6114 - L6115 9/11
multiwatt15 package mechanical data dim. mm inch min. typ. max. min. typ. max. a 5 0.197 b 2.65 0.104 c 1.6 0.063 d 1 0.039 e 0.49 0.55 0.019 0.022 f 0.66 0.75 0.026 0.030 g 1.14 1.27 1.4 0.045 0.050 0.055 g1 17.57 17.78 17.91 0.692 0.700 0.705 h1 19.6 0.772 h2 20.2 0.795 l 22.1 22.6 0.870 0.890 l1 22 22.5 0.866 0.886 l2 17.65 18.1 0.695 0.713 l3 17.25 17.5 17.75 0.679 0.689 0.699 l4 10.3 10.7 10.9 0.406 0.421 0.429 l7 2.65 2.9 0.104 0.114 m 4.2 4.3 4.6 0.165 0.169 0.181 m1 4.5 5.08 5.3 0.177 0.200 0.209 s 1.9 2.6 0.075 0.102 s1 1.9 2.6 0.075 0.102 dia1 3.65 3.85 0.144 0.152 l6114 - L6115 10/11
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of t hird part ies which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifica- tions mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information pre- viously supplied. sgs-thomson microelectronics products are not authorized for use as critical comp onents in life support dev ices or systems without express written approval of sgs-thomson microelectronics. ? 1994 sgs-thomson microelectronics - all rights reserved multiwatt? is a registered trademark of sgs-thomson microelectronics sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malay sia - malta - morocco - the netherlands - s ingapore - spain - sweden - switzerland - taiwan - thaliand - united kingdom - u.s.a. l6114 - L6115 11/11

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